KRISS has addressed these challenges by developing a new InAsP material, grown on an InP substrate as the light-absorbing ...

The Korea Research Institute of Standards and Science has successfully developed a high-quality compound semiconductor ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

The Korea Research Institute of Standards and Science (KRISS, President Ho Seong Lee) has successfully developed a high-quality compound semiconductor material for ultra-sensitive SWIR sensors.

Epitaxially grown triple-junction compound semiconductor devices have reached 41% AM1.5 power conversion efficiency with the aid of optical concentration 4. The single-crystal solar cells that ...

This makes it a key material for power electronics, radio frequency (RF) devices, and high-efficiency systems, particularly in applications such as 5G. In terms of deposition technologies, the ...

SiCSem Private Limited, a company that manufactures semiconductor materials for power electronics, is setting up a ‘Compound ...

KAIST (President Kwang Hyung Lee) announced on the 17th of January that the joint research team of Professor Shinhyun Choi and Professor Young-Gyu Yoon of the School of Electrical Engineering has ...

India’s first silicon carbide (SiC) semiconductor manufacturing facility will come up in Odisha with an investment of ₹ ...

The Odisha Cabinet chaired by Chief Minister Mohan Majhi on Wednesday approved a customized incentive package for RIR Power Electronics Limited (RIR) to establish India’s first Silicon Carbide (SiC) ...