据GIR (Global Info ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power ...

Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...

AEC-Q101 qualified bare die and discrete packaged devices undergo WLBI screening and are tested for avalanche breakdown ...

Diodes 公司 (Diodes)近日宣布推出AL8866Q LED 驱动器，扩大符合汽车标准*的产品组合。这款直流开关 LED 驱动控制器可驱动外部 MOSFET，支持降压、升压、降升压及单端一次侧电感转换器 (SEPIC) 拓扑，适用于高功率 ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Compound Semiconductor Industry size is expected to register 10.9% CAGR between 2024 and 2032 propelled by electric vehicles ...