据GIR (Global Info ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power ...

Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...

AEC-Q101 qualified bare die and discrete packaged devices undergo WLBI screening and are tested for avalanche breakdown ...

Diodes 公司 (Diodes)近日宣布推出AL8866Q LED 驱动器，扩大符合汽车标准*的产品组合。这款直流开关 LED 驱动控制器可驱动外部 MOSFET，支持降压、升压、降升压及单端一次侧电感转换器 (SEPIC) 拓扑，适用于高功率 ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

据外媒报道，尽管苹果公司（Apple）叫停其 无人驾驶 汽车“泰坦项目（Project Titan）”，但是该项目仍然获得了一系列专利，包括美国专利标局（USPTO）最近公布的编号为12192644的专利。

The difference between high-side and low-side power switching is not apparent to many new designers but is a critical aspect ...

The EPC91200 is designed for 3-phase brushless DC (BLDC) motor drive applications and features the EPC2305, a 150 V 3.0 mΩ ...

Renesas Electronics has introduced new 100V high-power N-Channel MOSFETs that are said to deliver industry-leading ...