1] GaN HEMTs meet silicon, silicon carbide transistors In GaN HEMTs, charge transport primarily depends on a two-dimensional “electron gas” (2DEG). The 2DEG forms because tensile strain at the ...

'ZDNET Recommends': What exactly does it mean? ZDNET's recommendations are based on many hours of testing, research, and comparison shopping. We gather data from the best available sources ...

The database consists of 2032 10-second 12-lead ECG signal records representing different morphologies of the ECG signal. Signals are digitized at 500 samples per second. The ECGs were collected from ...

MNIST, SVHN, CIFAR10 experiments in the mnist_svhn_cifar10 folder ...

A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by researchers at Humboldt-Universität zu Berlin and Ferdinand-Braun-Institut ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

LOS ANGELES, Jan. 17, 2025 (GLOBE NEWSWIRE) -- Glancy Prongay & Murray LLP reminds investors of the upcoming January 27, 2025 deadline to file a lead plaintiff motion in the class action filed on ...