Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at a CAGR of 10.5% ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at a CAGR of 10.5% during the forecast period 2025?2030 according to a new ...

The global monolithic microwave IC market is expected to grow from USD 14.53 billion in 2025 to USD 23.91 billion by 2030 at ...

增加功率器件的电流通常意味着增加其物理尺寸以保持可接受的功率密度。具有更高击穿电压的材料可以制造更小的器件，因为它们可以承受更高的功率密度。然而，器件之间的间距仍然受到需要充分隔离的限制。垂直器件架构允许设计人员保持相邻器件之间的间隔，同时减少整体电 ...

芝能智芯出品随着功率器件需求在不同应用场景中的快速增长，单一材料的解决方案已经无法满足电压和电流范围的全面要求。基于此，复合材料与创新架构逐渐成为改善器件性能的关键手段，氮化镓（GaN）凭借高电子迁移率和开关速度的优势，在低功耗和部分高压应用中展现出 ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

(Ralf Groene via LinkedIn). Ralf Groene, a key figure in the design of Microsoft’s devices for more than 17 years, has emerged from a short-lived retirement with a new role, as the vice ...