The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

The Visual Studio Revit add-in wizard provides a Visual Studio template for generating C# .NET Revit add-ins. It enables the instantaneous and automatic generation, installation and debugging of a new ...

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Abstract: Detrapping mechanisms and their dependence on applied bias have been studied in buffer-free AlGaN/GaN HEMTs on SiC. It is shown that the detrapping time constant decreases by orders of ...

The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.

According to our latest analysis, the global Aluminum Nitride Templates market size was valued at USD 11 million in 2023 and is forecast to a readjusted size of USD 78 million by 2030 with a CAGR of ...

For individual transistors such as Si and SiC MOSFETs, the SC capability has been widely reported. However, for the cascode GaN High electron mobility transistor (HEMT), which consists of a Si MOSFET ...

The main topics that we will discuss are GaN-on-SiC and GaN HEMT. Simon started his career in RF electronics at Marconi Instruments. In 2000, he joined Cree where he designed amplifiers using SiC and ...