Figure 3 details the proposed vertical isolation methodology. The n+ GaN layer is simulated with varying doping densities and thicknesses. Figure 3: Cross-sectional schematic of HEMT showing isolation ...
For this discussion, the flyback converter used in portable AC-DC supplies is simplified with a new semiconductor material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT).
EPC Space is the first company to achieve this certification for Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT). Looking forward, EPC Space plans to roll out 18 JANS-certified Rad ...
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Abstract: This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, ...
The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.
Abstract: Accurate and efficient simulation is essential for the thermal management of gallium nitride (GaN) high-electron-mobility transistors (HEMTs). However, conventional numerical approaches are ...