GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...
Figure 3 details the proposed vertical isolation methodology. The n+ GaN layer is simulated with varying doping densities and thicknesses. Figure 3: Cross-sectional schematic of HEMT showing isolation ...
For this discussion, the flyback converter used in portable AC-DC supplies is simplified with a new semiconductor material—a gallium-nitride (GaN) high-electron-mobility transistor (HEMT).
EPC Space is the first company to achieve this certification for Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT). Looking forward, EPC Space plans to roll out 18 JANS-certified Rad ...
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Abstract: This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, ...
The days of carrying around a bulky laptop charger and a separate charger for your phone are over and if you haven’t tried one yet, there’s never been a better time to pick up a GaN charger.
Abstract: Accurate and efficient simulation is essential for the thermal management of gallium nitride (GaN) high-electron-mobility transistors (HEMTs). However, conventional numerical approaches are ...
NCP1397GANGEVB,高性能集成高压驱动器评估板。 NCP1397GANGEVB 参考设计使用氮化镓(GaN) HEMT 作为开关器件提供 12V/20A 电源。电源转换器的前端将通用交流线路转换为 385 直流总线,同时实现接近单位功率因数。第二级是 DC-DC 级,它将 385 VDC 总线转换为 12V 输出 ...