Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches ...

EPC offers a GaN-based motor drive inverter reference design for industrial and battery-powered applications. The EPC91200 demonstration board, built for 3-phase brushless DC motors, integrates the ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

Figure 3 details the proposed vertical isolation methodology. The n+ GaN layer is simulated with varying doping densities and thicknesses. Figure 3: Cross-sectional schematic of HEMT showing isolation ...

SweGaN specializes in the production of materials for power devices, such as Gallium Nitride on Silicon Carbide (GaN-on-SiC) wafers, which are essential for high-performance electronics. “As part of ...

【新智元导读】GAN已死？不，它卷土重来了！布朗大学和康奈尔大学的研究者刚刚提出了R3GAN，充分利用现代架构设计，彻底摒弃临时技巧，一半参数就能碾压扩散模型。网友惊呼：游戏规则要改变了！ GAN已死？ 不，GAN又回来了！ 此前曾掀起AI圈巨大风暴的 ...

Pictured above: (a) Schematic energy band diagram of holes trapped in SiO 2 /GaN MOS structure. (b) Experimental C–V characteristics of MOS capacitor annealed at 400 °C in O 2 (black solid line), and ...

Engineers are moving from silicon-based solutions to wide-band gap ones Credit: IQE Electronics designers are now moving away from conventional Si-based power electronics and towards wide-bandgap ...

While alternative objectives have been introduced, issues with fragile losses persist, hindering progress. Popular GAN models like StyleGAN incorporate tricks such as gradient-penalized losses and ...

2025 年了，GAN 能否击败扩散模型？答案是 Yes！ 本周五，AI 社区开始讨论一种全新极简主义 GAN（生成对抗网络）。 现代版 GAN 基准论文成为了周五 ...