Shandong University team reports an novel enhancement-mode p-GaN gate HEMTs with the highest threshold voltage a 7.1V Researchers at Shandong University in China have reported an enhancement-mode ...

The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection components.[⁠1] GaN HEMTs meet silicon, silicon carbide transistors In GaN HEMTs, ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

Recent studies have focused on addressing the challenges associated with the fabrication and reliability of AlGaN/GaN HEMTs, particularly when integrated onto silicon wafers. These devices are ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...

And we pore over customer reviews to find out what matters to real people who already own and use the products and services we’re assessing. When you click through from our site to a retailer ...

Now, a €3.9m EU-funded project called ET COMPACT is developing three fuel-free propulsion systems around solar energy and ...

The database consists of 2032 10-second 12-lead ECG signal records representing different morphologies of the ECG signal. Signals are digitized at 500 samples per second. The ECGs were collected from ...

“I must correct that,” said DPM Gan, who is also Trade and Industry Minister ... What will really move things, he added, is if the region figures out a coordinated set of rules that is ...

MNIST, SVHN, CIFAR10 experiments in the mnist_svhn_cifar10 folder ...