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Compoundsemiconductor.net
19 小时
Going through the gears with gallium nitride
Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...
eeNews Europe
17 小时
US backs $23m GaN tech hub in Vermont
The University of Vermont in the US is to host a $23m research and development hub for gallium nitride (GaN) power ...
12 小时
Aehr Test Systems Shares Drop 26% After Fiscal Q2 Earnings Miss
Aehr reaffirmed its fiscal 2025 projection despite the poor results: at least $70 million in income and a non-GAAP profit ...
New Electronics
1 天
Gaining in the popularity stakes
Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.
9 小时
on MSN
University of Vermont Tech Hub receives $23M in federal grants for semiconductor development
This latest round of funding will allow researchers to continue to produce the technology that is crucial to so many elements ...
4 天
Navitas Semiconductor Corporation (NVTS): A Bull Case Theory
We came across a bullish thesis on Navitas Semiconductor Corporation (NVTS) on Twitter by Shay Boloor. In this article, we ...
Burlington-Plattsburgh WCAX-TV on MSN
7 小时
Biden administration awards $23M for Vermont ‘Tech Hub’
The Biden administration Tuesday announced $23 million to fund Vermont’s Tech Hub. The Green Mountain State is pushing to be ...
12 小时
on MSN
Semiconductor firm to grow Triangle operations with new CHIPS grant awarded as Biden exits
On Tuesday, the U.S. Department of Commerce awarded $70 million to the chipmaker MACOM to hire and expand in North Carolina.
scoop
21 小时
Power Semiconductor Market Size to Reach USD 90.5 Bn By 2033
Power Semiconductor Market size is expected to reach USD 90.5 billion by 2033, projected at a CAGR of 5.3% during forecast ...
Joplin Globe
5 天
Teledyne HiRel Semiconductors Releases High-Power RF GaN Switch (30 MHz to 5 GHz)
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP ...
IEEE
3 天
H. Fujii
Bipolar Transistor,Carrier Mobility,Channel Resistance,Conduction Band Edge,Continuous Growth,Conventional Process,Epitaxial Growth,Gallium Nitride,Gate Oxide ...
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