Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

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FREMONT, CA / ACCESSWIRE / January 7, 2025 / (NASDAQ:AEHR), a worldwide supplier of semiconductor test and burn-in equipment, today announced it has received an initial production order from a top ...

The University of Vermont in the US is to host a $23m research and development hub for gallium nitride (GaN) power ...

Aehr reaffirmed its fiscal 2025 projection despite the poor results: at least $70 million in income and a non-GAAP profit ...

Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.

This latest round of funding will allow researchers to continue to produce the technology that is crucial to so many elements ...

"Like SiC, GaN semiconductor MOSFETs are wide bandgap ... and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, artificial intelligence processors ...

The Biden administration Tuesday announced $23 million to fund Vermont’s Tech Hub. The Green Mountain State is pushing to be ...

Founded in January 2021, AGNIT Semiconductors is a vertically integrated Gallium Nitride (GaN) semiconductor start-up, which has its roots in the Indian Institute of Science (IISc) Bengaluru.