The University of Bristol leads on a £4.3 million project grant from the Engineering and Physical Sciences Research Council (EPSRC), investigating the development of Gallium Nitride (GaN)-on-Diamond ...

A GaN layer epitaxially grown on Si substrate is successfully bonded to a 10-mm by 10-mm diamond plate with no use of intermediate layers. The photo, taken from the transparent diamond side ...

The switch to diamond and aluminum nitride is forward-looking, as this is an emerging substitute to conventional materials, ...