Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...
One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...
Sponsored by Texas Instruments: A flyback with a GaN switch offers higher efficiency across all metrics versus silicon—and it ... mobility transistor (HEMT). While GaN has been around since ...
Terahertz (THz) oscillators and strained silicon devices are emerging ... for integration into existing GaN-based high electron mobility transistor (HEMT) technologies. Additionally, research ...
Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, this switch offers a very high breakdown voltage and high saturation current capabilities and is available in a ...
1月15日，据日媒报道，名古屋大学和日本电装公司利用横向 GaN HEMT，合作开发出了一种 800V 兼容逆变器（三相、三电平），主要用于驱动使用的电动汽车牵引电机（图 1）。 据了解，名古屋大学与松下控股、丰田合成、大阪大学和电装合作，参与了日本环境省自 2022 年以来实施的项目“加速实现创新 CO₂ 减排材料的社会实施和传播项目”。新开发的高压三电平逆变器是该项目努力的结果。 图1 ：电装 ...
Hosted on MSN1mon
ROHM and TSMC collaborate on GaN power devices for EV marketThe collaboration combines ROHM's device development expertise and TSMC's advanced GaN-on-silicon process technology ... electron mobility transistors (HEMT) for ROHM’s EcoGaN series.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback