A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by ...

Gallium Nitride (GaN) power devices are becoming ... One significant area of research involves the development of vertical GaN p-n diodes capable of withstanding high breakdown voltages.

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

GaN power semiconductors, Infineon highlights that gallium nitride will be a game-changing semiconductor material ...

gallium nitride, gallium oxide, gallium phosphide, gallium selenide and indium gallium arsenide. They will also apply to six germanium products: germanium dioxide, germanium epitaxial growth ...

Laser Diode Industry size is expected to register 14.4% CAGR between 2025 and 2034 propelled by rise in development of vertical cavity surface-emitting laser (VCSEL) technology.Selbyville, Delaware , ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN ... company is also exploring its use in plasma lights for vertical farming and sterilization applications.

and gallium nitride (GaN). These materials are essential for AI applications, advanced data centers, and high-performance computing, where they enable faster processing speeds and improved energy ...