Thermal dissociation of disilane: Quadrupole mass spectrometry investigation
- 已发布: 1992/11/01
- DOI: 10.1016/0165-2370(92)80004-6
- 引用者: 0
- Keywords: Disilane; gas phase; LPCVD; mass spectromet…
- 页数: 9
The thermal dissociation of disilane Si2H6 as a function of temperature has been studied in an impinging jet-type low-pressure chemical vapour deposition reactor in both cold and hot wall configurations, in order to investigate the influence of homogeneous gas-phase reactions. A quadrupole mass spec...Influence of temperature and residence time on thermal …
2017年9月1日 · The build-up of gas-phase intermediates in a narrow temperature range during thermal decomposition of SiH4 is known from literature for species with up to four silicon …
- 作者: Guro Marie Wyller, Thomas J. Preston, Trygve Mongstad, Dag Lindholm, Hallgeir Klette, Ørnulf Nordset...
- Publish Year: 2017
Thermal Decomposition Mechanism of Disilane | The Journal of …
2006年3月18日 · Concentrations of disilane and trisilane during thermal decomposition of disilane were quantitatively measured using the VUV-SPI method. Formation of Si 2 H 4 species was …
- 作者: Kazumasa Yoshida, Keiji Matsumoto, Tatsuo Oguchi, Kenichi Tonokura, Mitsuo Koshi
- Publish Year: 2006
- SiH4 Disilane Thermal 的研究
Gas Phase Reaction of Silane with Water at Different …
2023年2月24日 · A process was developed for low-temp. thermal chem. vapor deposition (CVD) of silicon dioxide (SiO2) in a single-wafer chamber utilizing disilane (Si2H6) and nitrous oxide (N2O) gaseous precursors. Deposition rate …
Mechanism of the thermal decomposition of monosilane
An ab initio Rice-Ramsperger-Kassel-Marcus/master equation investigation of SiH4 decomposition kinetics using a kinetic Monte Carlo approach. The …
- 作者: P. Neudorfl, A. Jodhan, O. P. Strausz
- Publish Year: 1980
discussion on the possible role of radical reactions in the thermal decomposition of monosilane continues to be topical for the last two decades. Cleavage of the Si7H bond rupture in the …
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1988年1月1日 · The SiH4 was 99.5% pure (principal impurity disilane - 0.490 and the S12I'I6 was 98.9% pure (principal impurity silane). The trisilane contained 2% each of SiH4 and Si2I36, …
Based on our knowledge of disilane decomposition, chlori-nated silane decomposition, and estimates of the thermochem-istry from the sources cited above, there are four possible …
Channel specific rate constants relevant to the thermal ... - PubMed
2005年6月9日 · Rate constants for the thermal dissociation of Si2H6 are predicted with a novel transition state model. The saddle points for dissociation on the Si2H6 potential energy …
Unit cell parameters and thermal expansion of silane SiH4
2008年3月1日 · X-Ray investigations of the temperature dependences of the lattice parameters and volumes of the low- and high-temperature phases of the light silane SiH4 have
