The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Table 1. Device summary. Table 2. Table 3. Thermal data. Tcase = 25 °C unless otherwise specified. Table 4. Max. 1.

X1360 Datasheet(HTML) 1 Page - STMicroelectronics : zoom in zoom out 1 / 10 page. November 2005. 1/10. 10. 2STX1360. LOW VOLTAGE FAST-SWITCHING. NPN POWER TRANSISTOR. Features VERY LOW COLLECTOR-EMITTER. SATUARATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. List of Unclassifed Man...

X1360 LOW Voltage Fast-switching NPN Power Transistor Features. VERY LOW COLLECTOR-EMITTER SATUARATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED IN COMPLANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE. Applications. EMERGENCY LIGHTING LED CCFL DRIVERS (BACK LIGHTING) VOLTAGE.

Download X1360 Datasheet. File Size: 175.15 Kbytes. Part #: X1360. Description: LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Manufacturer: STMicroelectronics.

2STX1360 X1360 T O-92 Bag. www.st.c om Electrical rati ngs 2STL1360, 2STX1360. 2/10 Doc ID 11763 Rev 3. 1 Electrical ratings. T able 2. Absolute maxim um ratings. Symbol P arameter. Va l u e. Unit. 2STX1360 2STL1360. V CBO Collector-base voltage (I E = 0) 80 V. V CEO Collector-emitter voltage (I B = 0) 60 V.

The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances …

The devices are NPN transistors manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. MFG CO. JILIN SINO-MICROELECTRONICS CO., LTD.

2STX1360 Transistor Datasheet pdf, 2STX1360 Equivalent. Parameters and Characteristics.

X1360 Datasheet(HTML) 3 Page - STMicroelectronics : zoom in zoom out 3 / 10 page. 2STX1360. 2 Electrical Characteristics. 3/10. 2. Electrical Characteristics. Table 3. Electrical Characteristics (T CASE = 25°C; unless otherwise specified) Note: 1 Pulsed duration = 300.